Facial EMG as an index of affective response to nicotine.

Negative affect reduction has been postulated to be a key feature of cigarette smoking. In the present study, facial electromyography (EMG), heart rate (HR), and skin conductance response (SCR) were used to evaluate the affective significance of acute nicotine administration and overnight withdrawal. Smokers (N = 115) attended four 90-min laboratory assessment sessions scheduled approximately 3 days apart. The sessions provided a complete crossing of 2 prelaboratory deprivation conditions (12-hr deprived vs. nondeprived) with 2 drug conditions (nicotine vs. placebo nasal spray). During each session, smokers viewed affective slides while facial EMG, HR, and SCR were recorded. Results indicated that for women, nicotine nasal spray resulted in lower corrugator EMG activity during both smoking-deprived and nondeprived sessions, compared with placebo. However, nondeprived women also showed an increase in zygomaticus EMG when given nicotine compared with placebo spray, whereas smoking-deprived women demonstrated a decrease in the zygomaticus response to nicotine compared with placebo. With men, nicotine also appeared to lower corrugator during deprivation, but not nondeprivation, compared with placebo spray, though the contrast only approached significance. With zygomaticus EMG, nicotine spray decreased men's zygomaticus responding during nondeprivation but not during deprivation, compared with placebo spray. The HR results reflected the stimulatory properties of the drug rather than nicotine's affective properties, whereas SCR was unresponsive to our experimental manipulations. The corrugator EMG results support negative reinforcement models of smoking that postulate that acute nicotine use reduces withdrawal-driven negative affect. (PsycINFO Database Record (c) 2010 APA, all rights reserved)     

35～1000kV线路绝缘子污闪电压值的估算

针对目前绝缘子污闪电压缺乏系统研究的现状,建立了35~1 000 kV输电线路用普通型绝缘子交流污闪电压的计算模型即展开普通型绝缘子成平面模型后分析交流污闪条件,计算出绝缘子在不同表面污层电导率条件下的临界污闪电压值;对35~1 000 kV输电线路用5种不同吨位的普通型绝缘子进行交流人工污秽试验,获其在各盐密下的50%污闪电压;通过计算值和试验值的对比,可将绝缘子表面污层电导率转化为盐密,从而算出各普通型绝缘子在不同盐密下的交流污闪电压值。试验验证计算结果误差小,说明该模型能够有效估算代表普通型绝缘子的50%污闪电压情况。该研究结果可供各电压等级输电线路外绝缘选择参改。     

轴向磁化的双环永磁轴承轴向磁力研究

基于分析一对永磁环间隙的磁能及磁导，根据具有线性退磁曲线的稀土永磁材料特性和磁通连续原理，通过虚功原理法，得到轴向磁化的双环永磁轴承轴向磁力解析数学模型。模型表明：轴向磁化的双环永磁轴承轴向磁力与磁环剩磁感应强度的平方成正比，近似与磁环的平均半径及磁环径向宽度成正比；轴向磁力随磁环轴向长度的增大而增大，随磁环轴向间隙、径向偏心及磁环相对磁导率的增大而减小。经验证，模型计算值和实验值基本吻合。该模型显式表达了轴向磁力与各参量间的关系，使得永磁轴承设计和优化简便易行，解决了轴向磁化的双环永磁轴承轴向磁力数值计算复杂的问题。     

计及角度不对称的配电网负荷不对称线损分析

针对当前研究配电网三相负荷不对称对线损的影响仅仅局限于三相大小不对称的情况,提出计及角度不对称的配电网三相不对称对线损有影响。通过分析三相不平衡线路的线损,用全电流经坐标变换的方法研究了计及角度不对称时的三相不平衡对线损的影响,推导出了线损增加率与相不平衡度的关系公式,并给出了配网中常见几种负荷不对称时的线损分析结果。通过对现场实测数据进行算例分析,结果表明考虑角度不对称时的线损增加率更接近于真实值,对准确地计算配电网中的线损更有指导意义。     

Thermal contact conductance at continuous roll-casting interface

The effects of surface roughness, strain rate, friction coefficient and pressure on real contact area were analyzed based on the research of Stupkiewicz. The real contact area model taking account of the effect of friction and deformation of material was obtained. The model of contact conductance at the rolling interface was obtained by integrating the specific feature of heat transfer through the interface of continuous roll-casting. The results indicate that the real contact area increases obviously when the material is under yield, and the real contact area varies inversely with surface roughness, whereas it varies exponentially with friction coefficient, strain rate and pressure, and the power factor depends on strain rate.     

凝汽器压力变化影响机组功率增量计算的研究

以汽轮机功率方程为基础,根据汽轮机变工况原理和其参数之间的变化关系,将背压变化的全过程分为亚临界工况和超临界工况,对末级进行分析计算,推导出功率增量的计算公式,确定出凝汽器真空修正曲线,有较高的精确度。     

一种声发射传感器的研制

设计了一种接触式声发射传感器,详细介绍了压电晶片、背衬、声匹配层以及前置放大器对声发射传感器灵敏度、分辨率、信噪比等指标的影响。利用阻抗分析仪对声发射传感器的输入电导进行了测定,结果表明声发射传感器设计方法可行。     

基于SWN理论提取复合关键字系统的设计与实现

实现了一个利用小世界网络模型(SWN)提取中文文档的关键字的系统。小世界网络模型具有两个统计性质:平均路径长度和聚类系数。本系统使用的算法首先对文档进行分词,以分词之间的相邻关系为边、以分词为节点构造文档结构图。然后计算每一个分词的平均路径长度变化量和聚类系数变化量,并且使用这两个变化量作为提取关键字的标准,最后按照一定策略合并关键字成复合关键字。本文首先详细介绍了小世界网络模型的概念和在关键字提取方面的应用,然后介绍了本系统的设计与实现,最后通过实验证明了该算法的正确性和有效性。     

An analytical drain current model for graded channel cylindrical/surrounding gate MOSFET

In the present paper, a comprehensive drain current model incorporating various effects such as drain-induced barrier lowering (DIBL), channel length modulation and impact ionization has been developed for graded channel cylindrical/surrounding gate MOSFET (GC CGT/SGT) and the expressions for transconductance and drain conductance have been obtained. It is shown that GC design leads to drain current enhancement, reduced output conductance and improved breakdown voltage. The effectiveness of GC design was examined by comparing uniformly doped (UD) devices with GC devices of various L₁/L₂ ratios and doping concentrations and it was found that GC devices offer superior characteristics as compared to the UD devices. The results so obtained have been compared with those obtained from 3D device simulator ATLAS and are found to be in good agreement.     

Novel structure of GaAs-based interdigital-gated HEMT plasma devices for solid-state THz wave amplifier

Theoretical analysis of potential distribution in the interdigital-gated high electron mobility transistor (HEMT) plasma wave device was carried out. The dc I–V characteristics of capacitively coupled interdigital structure showed that uniformity of electric field under the interdigital gates was improved compared to the dc-connected interdigital gate structure. Admittance measurements of capacitively coupled interdigital gate structure in the microwave region of 10–40 GHz showed the conductance modulation by drain–source voltage. These results indicate the existence of plasma wave interactions.